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IGBT Laser Annealing System

Product Introduction

Featuring precise single/dual pulse control, this system performs rapid laser annealing on the backside of silicon-based IGBT wafers post-ion implantation. It achieves superior activation depth while effectively repairing lattice damage caused during implantation.

Product Features
Field of application
Technical indicators

Product Features

Activation depth ≥ 7 μm

Throughput > 25 wafers per hour @ 8-inch

Excellent sheet resistance uniformity and surface appearance

Full-process in-situ monitoring and feedback capability

Supports ultra-thin wafers, TAIKO wafers, and warped wafers

Equipped with laser-assisted heating system

Field of application

Activation annealing following ion implantation in discrete device manufacturing processes

Technical indicators

Specification	DR-S-LA200S	DR-S-LA300S	DR-S-LA200D	DR-S-LA300D
Compatible Wafer Sizes	6"/8" compatible	8"/12" compatible	6"/8" compatible	8"/12" compatible
Laser Energy Density	≥ 5 J/cm2	≥ 5 J/cm2	≥ 5 J/cm2	≥ 5 J/cm2
Laser Stability	≤ 2%, RMS
Activation Rate	≥ 95% @B Implant, ≥ 90% @P Implant
Uniformity	Intra-wafer: ≤ 1%, Inter-wafer: ≤ 1% @ 8", RS
Cleanliness Control	≤ 30 @ 0.5 μm, ≤ 5 @ 1 μm
Automation System	Dual wafer loading ports, multi-axis robotic arm, pre-alignment unit