Principle

The laser doping intelligent manufacturing equipment uses laser doping technology to perform heavy doping in the contact part of the metal gate line (electrode) with the silicon wafer, while maintaining light doping (low concentration doping) outside the electrode. This structure reduces the recombination of the minority cassette on the emitter surface, and the metal electrode and emitter can form a good ohmic contact, so as to obtain higher short-circuit current, open-circuit voltage and fill factor, and improve the conversion efficiency of solar cells.